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A 1.6-2.6GHz 29dBm Injection-Locked Power Amplifier with 64% peak PAE in 65nm CMOS

Författare

Summary, in English

This paper presents a wideband CMOS power

amplifier intended for cellular handset applications. The circuit

exploits injection locking to achieve a power gain of 20.5dB from

a single stage amplifier. The maximum output power of 29dBm,

with a peak drain- and power-added-efficiency (PAE) of 66%

and 64%, respectively, occurs at a center frequency of 2GHz

with a 3V supply. A cross-coupled cascode topology enables a

wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output

power levels below 4dBm the circuit operates as a linear class

AB amplifier with a power consumption of 17mW from a 0.48V

supply. The power gain of 20.5dB is kept constant for all output

powers; with an AM-AM- and AM-PM-conversion of 0.2dB and

17deg, respectively, over the entire WCDMA dynamic range of

80dB. The circuit is implemented in a standard 65nm CMOS

process with a total chip area of 0.52x0.48mm2 including pads.

Publiceringsår

2011

Språk

Engelska

Sidor

299-302

Publikation/Tidskrift/Serie

Proc. IEEE European Solid State Circuits Conference

Dokumenttyp

Konferensbidrag

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering

Nyckelord

  • Power efficiency
  • Poweramplifier
  • Injection lock
  • CMOS
  • Hybrid EER

Conference name

IEEE European Solid State Circuits Conference, ESSCIRC 2011

Conference date

2011-09-12 - 2011-09-16

Conference place

Helsinki, Finland

Status

Published

Forskningsgrupp

  • Elektronikkonstruktion
  • Analog RF

ISBN/ISSN/Övrigt

  • ISSN: 1930-8833