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A 1.6-2.6GHz 29dBm Injection-Locked Power Amplifier with 64% peak PAE in 65nm CMOS

Publiceringsår: 2011
Språk: Engelska
Sidor: 299-302
Publikation/Tidskrift/Serie: Proc. IEEE European Solid State Circuits Conference
Dokumenttyp: Konferensbidrag
Förlag: IEEE


This paper presents a wideband CMOS power
amplifier intended for cellular handset applications. The circuit
exploits injection locking to achieve a power gain of 20.5dB from
a single stage amplifier. The maximum output power of 29dBm,
with a peak drain- and power-added-efficiency (PAE) of 66%
and 64%, respectively, occurs at a center frequency of 2GHz
with a 3V supply. A cross-coupled cascode topology enables a
wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output
power levels below 4dBm the circuit operates as a linear class
AB amplifier with a power consumption of 17mW from a 0.48V
supply. The power gain of 20.5dB is kept constant for all output
powers; with an AM-AM- and AM-PM-conversion of 0.2dB and
17deg, respectively, over the entire WCDMA dynamic range of
80dB. The circuit is implemented in a standard 65nm CMOS
process with a total chip area of 0.52x0.48mm2 including pads.



  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Power efficiency
  • Power amplifier
  • Injection lock
  • CMOS
  • Hybrid EER


Helsinki, Finland
  • Vinnova
  • Elektronikkonstruktion
  • Analog RF
  • ISSN: 1930-8833

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