Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires

Summary, in English

The development of a ternary AlxIn1-xP shell grown around GaAs nanowires epitaxially grown in the [(1) over bar (1) over bar (1) over bar] direction has been studied. Morphology and composition of the shell have been studied using cross-sectional transmission electron microscopy (TEM). The side facets of the shell are found to develop dominant {1 (1) over bar 0} macro facets with small (approx. 5 nm) {1 1 (2) over bar} facets independent of the GaAs core side facets. Phase segregation is observed as AIP developing from the {1 1 (2) over bar} facets, while Al0.5In0.5P is found in the rest of the ternary shell. (C) 2010 Elsevier B.V. All rights reserved.

• Författare: Jakob Wagner; Niklas Sköld; Reine Wallenberg; Lars Samuelson
• Avdelning/ar: Centrum för analys och syntes; Fasta tillståndets fysik; NanoLund: Centre for Nanoscience
• Publiceringsår: 2010
• Språk: Engelska
• Sidor: 1755-1760
• Publikation/Tidskrift/Serie: Journal of Crystal Growth
• Volym: 312
• Issue: 10
• Länkar: http://dx.doi.org/10.1016/j.jcrysgro.2010.02.009
• Dokumenttyp: Artikel i tidskrift
• Förlag: Elsevier
• Ämne: Condensed Matter Physics; Chemical Sciences
• Nyckelord: Core-shell nanowire; HRTEM; Segregation; GaAs; AlxIn1-xP
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0022-0248