Properties of electrical contacts to filamentary nanocrystals

In English We investigated properties of electrical contacts to filamentary nanocrystals based on InAs, synthesized by chemical-beam epitaxy. Robust, low resistive Ohmic contacts were manufactured to InAs segment of filamentary nanocrystals both directly and indirectly, through a catalytic particle at the top of nanocrystals. Current-voltage characteristics and degradation characteristics of devices based on InAs nanocrystals with electrical contacts are presented. It was determined, that properties of electrical contacts to nanocrystals can be improved by excluding natural oxide layer on the interface between metal and nanocrystal material.