Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems.
- Z.I. Alferov
- L. Esaki
Förlag: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
Gold nanoelectrodes with gaps of less than 10 nm were formed by conventional E-beam lithography on silicon substrates covered by Al2O3. Molecular films were deposited on the electrodes by Langmuir-Shaefer technique. The I-V curves of such systems show a suppressed conductance indicating a correlated electron tunnelling through the system. All measurements were made at room temperature.
- Physics and Astronomy
- single-electron tunneling
- correlated electron tunneling
- molecular electronics
- molecular clusters
10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY
St. Petersburg, Russia