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Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates.

In English

Författare

  • Johannes Svensson
  • Niklas Lindahl
  • Hoyeol Yun
  • Miri Seo
  • Daniel Midtvedt
  • Yury Tarakanov
  • Niclas Lindvall
  • Oleg Nerushev
  • Jari Kinaret
  • Sangwook Lee
  • Eleanor E B Campbell
Visa allt

Summary, in English

Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.

Publiceringsår

2011

Språk

Engelska

Sidor

3569-3575

Publikation/Tidskrift/Serie

Nano Letters

Volym

11

Dokumenttyp

Artikel i tidskrift

Förlag

The American Chemical Society (ACS)

Ämne

  • Nano Technology

Status

Published

Forskningsgrupp

  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 1530-6992