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High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires

Publiceringsår: 2011
Språk: Engelska
Sidor: 4222-4226
Publikation/Tidskrift/Serie: Nano Letters
Volym: 11
Nummer: 10
Dokumenttyp: Artikel
Förlag: American Chemical Society

Sammanfattning

We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm2 at 0.50 V, maximum peak current of 67 kA/cm2 at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.

Disputation

Nyckelord

  • Technology and Engineering

Övriga

Published
Yes
  • Nano
  • Digital ASIC
  • ISSN: 1530-6984

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