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Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Publiceringsår: 2011
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 99
Nummer: 8
Dokumenttyp: Artikel
Förlag: American Institute of Physics


Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]



  • Natural Sciences
  • Physical Sciences


  • ISSN: 0003-6951

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