Du är här

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Författare:
Publiceringsår: 2011
Språk: Engelska
Sidor:
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 99
Nummer: 8
Dokumenttyp: Artikel
Förlag: American Institute of Physics

Sammanfattning

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. doi:10.1063/1.3618674

Disputation

Nyckelord

  • Physics and Astronomy

Övrigt

Published
Yes
  • ISSN: 0003-6951

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen

LERU logo U21 logo