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A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation

In English

Författare

Summary, in English

SiGe Esaki diodes have been realized by rapid thermal diffusion of phosphorous into an SiGe layer grown by ultra-high-vacuum chemical-vapor-deposition on an Si p(+)-substrate for the first time. The phosphorous-doped SiGe forms the n(+)-electrode, while heavily boron-doped Si0.74Ge0.26 and Si substrate is used for the p(+) electrode. The diodes show a peak current density of 0.18 kA/cm(2), a current peak-to-valley ratio of 2.6 at room temperature, and they exhibit only a weak temperature dependence. Cross-sectional transmission microscopy showed a good crystalline quality of the strained Si0.74Ge0.26 layer even after the diffusion step at 900 degrees C.

Publiceringsår

2005

Språk

Engelska

Sidor

594-598

Publikation/Tidskrift/Serie

IEEE Transactions on Nanotechnology

Volym

4

Issue

5

Dokumenttyp

Artikel i tidskrift

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Nyckelord

  • ultra-high-vacuum chemical vapor
  • tunnel diode
  • Esaki diode
  • SiGe
  • deposition (UHV CVD)

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1536-125X