Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
Författare
Summary, in English
Avdelning/ar
Publiceringsår
2011
Språk
Engelska
Sidor
444-447
Publikation/Tidskrift/Serie
Microelectronic Engineering
Volym
88
Issue
4
Dokumenttyp
Konferensbidrag
Förlag
Elsevier
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- III/V
- Nanowire doping
- Capacitance-voltage
- InAs
- Vertical wrap gate
Conference name
EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials
Conference date
2010-06-07 - 2010-06-11
Conference place
Strasbourg, France
Status
Published
Forskningsgrupp
- Nano
ISBN/ISSN/Övrigt
- ISSN: 1873-5568
- ISSN: 0167-9317