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Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties

In English

Författare

  • D. Usachov
  • O. Vilkov
  • A. Grueneis
  • D. Haberer
  • A. Fedorov
  • V. K. Adamchuk
  • Alexei Preobrajenski
  • P. Dudin
  • A. Barinov
  • M. Oehzelt
  • C. Laubschat
  • D. V. Vyalikh
Visa allt

Summary, in English

A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.

Publiceringsår

2011

Språk

Engelska

Sidor

5401-5407

Publikation/Tidskrift/Serie

Nano Letters

Volym

11

Issue

12

Dokumenttyp

Artikel i tidskrift

Förlag

The American Chemical Society (ACS)

Ämne

  • Nano Technology

Nyckelord

  • Graphene
  • nitrogen doping
  • electronic structure
  • synthesis
  • triazine
  • ARPES

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1530-6992