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GaSb nanowire single-hole transistor

Publiceringsår: 2011
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 99
Nummer: 26
Dokumenttyp: Artikel
Förlag: American Institute of Physics


We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavior. The fabricated devices are characterized by transport measurements at 1.5 K, where periodic conductance oscillations due to Coulomb blockade are observed and a charging energy of 5 meV is determined. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673328]



  • Technology and Engineering


  • Nano
  • ISSN: 0003-6951

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