GaSb nanowire single-hole transistor
Författare
Summary, in English
We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavior. The fabricated devices are characterized by transport measurements at 1.5 K, where periodic conductance oscillations due to Coulomb blockade are observed and a charging energy of 5 meV is determined. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673328]
Publiceringsår
2011
Språk
Engelska
Publikation/Tidskrift/Serie
Applied Physics Letters
Volym
99
Issue
26
Dokumenttyp
Artikel i tidskrift
Förlag
American Institute of Physics (AIP)
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Status
Published
Forskningsgrupp
- Nano
ISBN/ISSN/Övrigt
- ISSN: 0003-6951