Meny

Javascript verkar inte påslaget? - Vissa delar av Lunds universitets webbplats fungerar inte optimalt utan javascript, kontrollera din webbläsares inställningar.
Du är här

Studies of Li intercalation of hydrogenated graphene on SiC(0001)

Författare:
Publiceringsår: 2012
Språk: Engelska
Sidor: 401-406
Publikation/Tidskrift/Serie: Surface Science
Volym: 606
Nummer: 3-4
Dokumenttyp: Artikel
Förlag: Elsevier Science BV

Sammanfattning

The effects of Li deposition on hydrogenated bilayer graphene on SiC(0001) samples, i.e. on quasi-freestanding bilayer graphene samples, are studied using low energy electron microscopy, micro-low-energy electron diffraction and photoelectron spectroscopy. After deposition, some Li atoms form islands on the surface creating defects that are observed to disappear after annealing. Some other Li atoms are found to penetrate through the bilayer graphene sample and into the interface where H already resides. This is revealed by the existence of shifted components, related to H-SiC and Li-SiC bonding, in recorded core level spectra. The Dirac point is found to exhibit a rigid shift to about 1.25 eV below the Fermi level, indicating strong electron doping of the graphene by the deposited Li. After annealing the sample at 300-400 degrees C formation of LiH at the interface is suggested from the observed change of the dipole layer at the interface. Annealing at 600 degrees C or higher removes both Li and H from the sample and a monolayer graphene sample is re-established. The Li thus promotes the removal of H from the interface at a considerably lower temperature than after pure H intercalation. (C) 2011 Elsevier B.V. All rights reserved.

Disputation

Nyckelord

  • Physics and Astronomy
  • Graphene
  • Bilayer
  • Hydrogenation
  • Li
  • LEEM
  • PES
  • LEED
  • ARPES

Övriga

Published
Yes
  • ISSN: 0039-6028

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen