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Controllable oxidation of h-BN monolayer on Ir(111) studied by core-level spectroscopies

Publiceringsår: 2012
Språk: Engelska
Sidor: 564-570
Publikation/Tidskrift/Serie: Surface Science
Volym: 606
Nummer: 3-4
Dokumenttyp: Artikel
Förlag: Elsevier Science BV


The effect of atomic oxygen adsorption on the structure and electronic properties of monolayer hexagonal boron nitride (h-BN) grown on Ir(111) has been studied using near edge X-ray absorption fine structure spectroscopy (NEXAFS), photoelectron spectroscopy (PES), and low-energy electron diffraction (LEED). It has been shown that the oxidation of the h-BN monolayer occurs through a gradual substitution of N by O in the h-BN lattice. This process leads to the formation of defect sites corresponding to three different types of the B atom environment (BN3-xOx with x=1,2,3). The oxidation of the h-BN monolayer is very different from the case of graphene on Ir(111), where adsorption of atomic oxygen results mainly in the formation of epoxy groups J. Phys. Chem. C. 115, 9568 (2011). A post-annealing of the h-BN monolayer after oxygen exposure results in further destruction of the B N bonds and formation of a B2O3-like structure. (C) 2011 Elsevier B.V. All rights reserved.



  • Physics and Astronomy
  • Photoelectron spectroscopy
  • Near-edge X-ray absorption fine structure
  • h-BN monolayer
  • Graphene
  • Oxidation


  • ISSN: 0039-6028

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