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Controllable oxidation of h-BN monolayer on Ir(111) studied by core-level spectroscopies

In English

Författare

Summary, in English

The effect of atomic oxygen adsorption on the structure and electronic properties of monolayer hexagonal boron nitride (h-BN) grown on Ir(111) has been studied using near edge X-ray absorption fine structure spectroscopy (NEXAFS), photoelectron spectroscopy (PES), and low-energy electron diffraction (LEED). It has been shown that the oxidation of the h-BN monolayer occurs through a gradual substitution of N by O in the h-BN lattice. This process leads to the formation of defect sites corresponding to three different types of the B atom environment (BN3-xOx with x=1,2,3). The oxidation of the h-BN monolayer is very different from the case of graphene on Ir(111), where adsorption of atomic oxygen results mainly in the formation of epoxy groups [J. Phys. Chem. C. 115, 9568 (2011)]. A post-annealing of the h-BN monolayer after oxygen exposure results in further destruction of the B N bonds and formation of a B2O3-like structure. (C) 2011 Elsevier B.V. All rights reserved.

Publiceringsår

2012

Språk

Engelska

Sidor

564-570

Publikation/Tidskrift/Serie

Surface Science

Volym

606

Issue

3-4

Dokumenttyp

Artikel i tidskrift

Förlag

Elsevier

Ämne

  • Natural Sciences
  • Physical Sciences

Nyckelord

  • Photoelectron spectroscopy
  • Near-edge X-ray absorption fine structure
  • h-BN monolayer
  • Graphene
  • Oxidation

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0039-6028