Dual-gate induced InP nanowire diode
Författare
Summary, in English
Publiceringsår
2011
Språk
Engelska
Sidor
279-280
Publikation/Tidskrift/Serie
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
Volym
1399
Dokumenttyp
Konferensbidrag
Förlag
American Institute of Physics (AIP)
Ämne
- Condensed Matter Physics
Nyckelord
- Fermi level tuning
- InP
- wrap-gate
- nanowire
Conference name
30th International Conference on the Physics of Semiconductors (ICPS-30)
Conference date
2010-07-25 - 2010-07-30
Conference place
Seoul, Korea, Republic of
Status
Published
Forskningsgrupp
- Nanometer structure consortium (nmC)
ISBN/ISSN/Övrigt
- ISSN: 1551-7616
- ISSN: 0094-243X