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Dual-gate induced InP nanowire diode

Publiceringsår: 2011
Språk: Engelska
Sidor: 279-280
Publikation/Tidskrift/Serie: Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
Volym: 1399
Dokumenttyp: Konferensbidrag
Förlag: American Institute of Physics

Sammanfattning

Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.

Disputation

Nyckelord

  • Technology and Engineering
  • Fermi level tuning
  • InP
  • wrap-gate
  • nanowire

Övriga

30th International Conference on the Physics of Semiconductors (ICPS-30)
2014-07-27
Seoul, South Korea
Published
Yes
  • Nanometer structure consortium (nmC)
  • ISSN: 0094-243X

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