Meny

Javascript is not activated in your browser. This website needs javascript activated to work properly.
Du är här

GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence

Författare:
Publiceringsår: 2011
Språk: Engelska
Sidor:
Publikation/Tidskrift/Serie: Journal of Physics: Conference Series
Volym: 326
Dokumenttyp: Konferensbidrag
Förlag: American Institute of Physics

Sammanfattning

We present cathodoluminescence data of nanowires (NWs) grown using size-selected gold particles as seeds. The NWs have a GaAs core with a diameter of 50 nm and a length of several mu m. The NWs in this study were generally covered with a shell of AlGaAs. With increasing growth temperature, the emission intensity increases significantly. From a variety of growth conditions, we conclude that the exposed sides of the NWs during growth play an important role in the emission intensity. The diffusion of carriers was studied by inserting a segment of GaInAs in GaAs NWs. By capping the NWs with an AlGaAs shell, we observe a tenfold increase in the diffusion length along the core.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

17th International Conference on Microscopy of Semiconducting Materials
2014-04-05
Cambridge, England
Published
Yes
  • Nanometer structure consortium (nmC)
  • ISSN: 1742-6588

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen