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GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence

In English

Författare

Summary, in English

We present cathodoluminescence data of nanowires (NWs) grown using size-selected gold particles as seeds. The NWs have a GaAs core with a diameter of 50 nm and a length of several mu m. The NWs in this study were generally covered with a shell of AlGaAs. With increasing growth temperature, the emission intensity increases significantly. From a variety of growth conditions, we conclude that the exposed sides of the NWs during growth play an important role in the emission intensity. The diffusion of carriers was studied by inserting a segment of GaInAs in GaAs NWs. By capping the NWs with an AlGaAs shell, we observe a tenfold increase in the diffusion length along the core.

Publiceringsår

2011

Språk

Engelska

Sidor

012042-012042

Publikation/Tidskrift/Serie

Journal of Physics: Conference Series

Volym

326

Dokumenttyp

Konferensbidrag

Förlag

American Institute of Physics (AIP)

Ämne

  • Chemical Sciences
  • Condensed Matter Physics

Conference name

17th International Conference on Microscopy of Semiconducting Materials

Conference date

2011-04-04 - 2011-04-07

Status

Published

Forskningsgrupp

  • Nanometer structure consortium (nmC)

ISBN/ISSN/Övrigt

  • ISSN: 1742-6596
  • ISSN: 1742-6588