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High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET

Publiceringsår: 2011
Språk: Engelska
Publikation/Tidskrift/Serie: 2011 IEEE International Electron Devices Meeting (IEDM)
Dokumenttyp: Konferensbidrag
Förlag: IEEE

Sammanfattning

In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.

Disputation

Nyckelord

  • Technology and Engineering

Övriga

IEEE International Electron Devices Meeting (IEDM)
2014-12-06
Washington, DC
Published
Yes

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