Javascript is not activated in your browser. This website needs javascript activated to work properly.
Du är här

Silicon intercalation into the graphene-SiC interface

  • F. Wang
  • K. Shepperd
  • J. Hicks
  • M. S. Nevius
  • H. Tinkey
  • A. Tejeda
  • A. Taleb-Ibrahimi
  • F. Bertran
  • P. Le Fevre
  • D. B. Torrance
  • P. N. First
  • W. A. de Heer
  • Alexei Zakharov
  • E. H. Conrad
Publiceringsår: 2012
Språk: Engelska
Publikation/Tidskrift/Serie: Physical Review B
Volym: 85
Nummer: 16
Dokumenttyp: Artikel
Förlag: American Physical Society


In this work we use low-energy electron microscopy, x-ray photoemission electron microscopy, and x-ray photoelectron spectroscopy to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000 (1) over bar) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020 degrees C. In a sequence of depositions, we have been able to intercalate similar to 6 ML of Si into the graphene-SiC interface.



  • Medicine and Health Sciences


  • ISSN: 1098-0121

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen