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Electron mean free path for GaAs(100)-c(4x4) at very low energies

Publiceringsår: 2004
Språk: Engelska
Sidor: 1196-1199
Publikation/Tidskrift/Serie: Proceedings of the 22nd European Conference on Surface Science (Surface Science)
Volym: 566
Dokumenttyp: Konferensbidrag
Förlag: Elsevier Science B.V.


Electron mean free path (MFP) was determined by the angular resolved photoemission in 10-40 eV energy range for GaAs(100)-c(4 x 4) by the overlayer method. The investigation was based on the attenuation of the normal photoemission intensity of the Al 2p line from the molecular-beam-epitaxy grown GaAlAs layer buried four monolayers of GaAs below the surface. The energy dependence of the MFP shows a pronounced maximum at about 30 eV which is related to the corresponding section of the electron band structure of GaAs(100). (C) 2004 Elsevier B.V. All rights reserved.



  • Physical Sciences
  • Natural Sciences
  • electron solid interactions
  • spectroscopy
  • synchrotron radiation photoelectron
  • molecular beam epitaxy
  • gallium arsenide


22nd European Conference on Surface Science
7 - 12 September 2003
Prague, Czech Republic
  • ISSN: 0039-6028

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