Resonant tunneling permeable base transistors with high transconductance
Författare
Summary, in English
A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained.
Publiceringsår
2004
Språk
Engelska
Sidor
678-680
Publikation/Tidskrift/Serie
IEEE Electron Device Letters
Volym
25
Issue
10
Dokumenttyp
Artikel i tidskrift
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- resonant tunneling
- gallium arsenide (GaAs)
- permeable base transistors
- transistors
- tungsten
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0741-3106