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A GaN HEMT power amplifier with variable gate bias for envelope and phase signals

In English

Författare

Summary, in English

This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination. The low-frequency envelope signal is used to vary the gate (bias) voltage of the device, resulting in a pulse width modulated drain voltage, while modulation of supply voltage or current is avoided. The test circuit is implemented using a discrete GaN HEMT power amplifier and discrete surface-mount passive components assembled on a PCB. Measurements showed a maximum drain efficiency of 59% at 360 MHz, at an output power of 29 dBm. The output power as a function of the gate bias voltage varied between 3 and 29 dBm, with the drain efficiency varying between 6 and 59%.

Publiceringsår

2007

Språk

Engelska

Sidor

108-111

Publikation/Tidskrift/Serie

[Host publication title missing]

Dokumenttyp

Konferensbidrag

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

Norchip conference, 2007

Conference date

2007-11-19 - 2007-11-20

Conference place

Aalborg, Denmark

Status

Published

Forskningsgrupp

  • Elektronikkonstruktion

ISBN/ISSN/Övrigt

  • ISBN: 978-1-4244-1516-8