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Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

Publiceringsår: 2012
Språk: Engelska
Sidor: 903-905
Publikation/Tidskrift/Serie: Acta Physica Polonica A
Volym: 121
Nummer: 4
Dokumenttyp: Artikel
Förlag: Polish Academy of Sciences. Institute of Physics


Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500 degrees C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga1-xMnxAs/GaAs layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230 degrees C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs



  • Physics and Astronomy


  • ISSN: 0587-4246

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