High-Performance InAs Nanowire MOSFETs

Summary, in English

In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.

• Författare: Anil Dey; Claes Thelander; Erik Lind; Kimberly Dick Thelander; Mattias Borg; Magnus Borgström; Peter Nilsson; Lars-Erik Wernersson
• Avdelning/ar: Institutionen för elektro- och informationsteknik; Fasta tillståndets fysik; Centrum för analys och syntes; NanoLund: Centre for Nanoscience
• Publiceringsår: 2012
• Språk: Engelska
• Sidor: 791-793
• Publikation/Tidskrift/Serie: IEEE Electron Device Letters
• Volym: 33
• Issue: 6
• Fulltext: - 1 MB; Download statistics
• Länkar: http://dx.doi.org/10.1109/LED.2012.2190132
• Dokumenttyp: Artikel i tidskrift
• Förlag: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Ämne: Electrical Engineering, Electronic Engineering, Information Engineering
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0741-3106