Coupling between lateral modes in a vertical resonant tunneling structure
Författare
Summary, in English
We present experimental results and theoretical calculations of the vertical electron transport through a laterally constricted resonant tunneling transistor. Current-voltage measurements at 4.2 K show numerous current peaks that exhibit a complex dependence on the applied gate voltage. A scattering-matrix approach combined with the Landauer formalism was used to perform quantum mechanical calculations of the electron transport through a quantum dot structure with laterally confined emitter and collector regions. The simulations qualitatively reproduce the measured data, suggesting a strong coupling between the lateral modes in the quantum dot and the collector
Publiceringsår
2002
Språk
Engelska
Sidor
950-953
Publikation/Tidskrift/Serie
Physica E: Low-Dimensional Systems and Nanostructures
Volym
13
Issue
2-4
Dokumenttyp
Artikel i tidskrift
Förlag
Elsevier
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Nyckelord
- quantum dot structure
- 4.2 K
- vertical resonant tunneling structure
- vertical electron transport
- laterally constricted resonant tunneling transistor
- lateral modes coupling
- scattering-matrix approach
- Landauer formalism
- current-voltage measurements
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1386-9477
- CODEN: PELNFM