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Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures

Publiceringsår: 2012
Språk: Engelska
Publikation/Tidskrift/Serie: Nanotechnology
Volym: 23
Nummer: 24
Dokumenttyp: Artikel
Förlag: IOP Publishing Ltd


Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition.



  • Physics and Astronomy


  • ISSN: 0957-4484

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