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InP hot electron transistors with a buried metal gate

Författare:
Publiceringsår: 2003
Språk: Engelska
Sidor: 7221-7226
Publikation/Tidskrift/Serie: Japanese Journal of Applied Physics - Part 1: Regular papers, Short notes and Review papers
Volym: 42
Nummer: 12
Dokumenttyp: Artikel
Förlag: Institute of Pure and Applied Physics

Sammanfattning

To apply the ballistic nature of hot electrons, an InP hot electron transistor with a buried metal (BM-HET) is reported. In this device, carriers are extracted from the emitter by an attractive potential originating from an embedded metal grating, and they propagate through intrinsic semiconductor material only. A simple estimation shows a high cutoff frequency and low output conductance. The estimated highest cutoff frequency is approximately 1 THz. Fabricated devices show that the collector current increased with the gate bias. After extraction of the leakage cur-rent, a clear saturation of the collector current in common-emitter characteristics was confirmed and the possibility of BM-HET as a candidate for high-speed electron devices was demonstrated.

Disputation

Nyckelord

  • Physics and Astronomy
  • hot electron transistors
  • buried metal gate
  • ballistic electron
  • InP

Övriga

Published
Yes
  • ISSN: 0021-4922

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