Low power 0.18μm CMOS dual-band front-end
Författare
Summary, in English
Publiceringsår
2005
Språk
Engelska
Sidor
81-84
Publikation/Tidskrift/Serie
2005 IEEE Asian Solid-State Circuits Conference
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- common-gate low noise amplifier
- CMOS dual-band front-end
- capacitive cross coupling
- passive mixer
- capacitor switching
- 2.4 mA
- resonance frequency
- 2.2 to 4 GHz
- 0.18 micron
- 1.8 V
- 1 V
Conference name
2005 IEEE Asian Solid-State Circuits Conference
Conference date
2005-11-01 - 2005-11-03
Conference place
Hsinchu, Taiwan
Status
Published
ISBN/ISSN/Övrigt
- ISBN: 0-7803-9162-4