850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier
Författare
Summary, in English
This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.
Publiceringsår
2006
Språk
Engelska
Sidor
403-406
Publikation/Tidskrift/Serie
Proceedings of European Microwave Week 2006
Länkar
Dokumenttyp
Konferensbidrag
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Status
Published