Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

Summary, in English

We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.

• Författare: SE Andresen; BS Sorensen; FB Rasmussen; PE Lindelof; Janusz Sadowski; CM Guertler; JAC Bland
• Avdelning/ar: MAX IV-laboratoriet
• Publiceringsår: 2003
• Språk: Engelska
• Sidor: 3990-3994
• Publikation/Tidskrift/Serie: Applied Physics Reviews
• Volym: 94
• Issue: 6
• Länkar: http://dx.doi.org/10.1063/1.1602945
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Natural Sciences; Physical Sciences
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 1931-9401