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Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

Publiceringsår: 2003
Språk: Engelska
Sidor: 3990-3994
Publikation/Tidskrift/Serie: Journal of Applied Physics
Volym: 94
Nummer: 6
Dokumenttyp: Artikel
Förlag: American Institute of Physics


We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.



  • Physics and Astronomy


  • ISSN: 0021-8979

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