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Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions

Publiceringsår: 2003
Språk: Engelska
Sidor: 2369-2371
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 83
Nummer: 12
Dokumenttyp: Artikel
Förlag: American Institute of Physics


The current-voltage (I-V) characteristics of three-terminal ballistic junctions (TBJs) fabricated from high-electron-mobility GaInAs/InP quantum-well structures are measured in the six-terminal configuration. These characteristics show strong nonlinear, diode-like behavior, in agreement with recent theoretical calculations. Furthermore, the I-V characteristics are tunable by the voltage applied directly to one branch of the TBJs acting as a gate. An additional tuning of the characteristics of the TBJ devices can be performed using an in-plane side gate. All the presented characteristics are measured at room temperature, which makes TBJ devices promising for future nanoelectronic applications. (C) 2003 American Institute of Physics.



  • Condensed Matter Physics


  • ISSN: 0003-6951

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