Magnetotransport through nanoconstriction in ferromagnetic semiconductor (Ga,Mn)As
Publikation/Tidskrift/Serie: Acta Physica Polonica A ( Proceedings of the XXXII International School on Physics of Semiconducting Compounds, Part 1)
Förlag: POLISH ACAD SCIENCES INST PHYSICS
We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga, Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.
- Physics and Astronomy
XXXII International School on Physics of Semiconducting Compounds
May 30--June 6, 2003
- ISSN: 0587-4246