Hopping Conduction in Mn Ion-Implanted GaAs Nanowires.
Publikation/Tidskrift/Serie: Nano letters
Förlag: American Chemical Society
We report on temperature-dependent charge transport in heavily doped Mn(+)-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.
- Physics and Astronomy
- ISSN: 1530-6992