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Hopping Conduction in Mn Ion-Implanted GaAs Nanowires.

  • Waldomiro Paschoal
  • Sandeep Kumar
  • Christian Borschel
  • Phillip Wu
  • Carlo M Canali
  • Carsten Ronning
  • Lars Samuelson
  • Håkan Pettersson
Publiceringsår: 2012
Språk: Engelska
Sidor: 4838-4842
Publikation/Tidskrift/Serie: Nano letters
Volym: 12
Nummer: 9
Dokumenttyp: Artikel
Förlag: American Chemical Society


We report on temperature-dependent charge transport in heavily doped Mn(+)-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.



  • Physics and Astronomy


  • ISSN: 1530-6992

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