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Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices

Publiceringsår: 2012
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 101
Nummer: 4
Dokumenttyp: Artikel
Förlag: American Institute of Physics


The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm(2) at V-DS = 0.16V and a record-high current density of 3.6 MA/cm(2) at V-DS = -0.5V. (C) 2012 American Institute of Physics. []



  • Physics and Astronomy


  • ISSN: 0003-6951

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