Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP

Summary, in English

We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.

• Författare: Ivan Maximov; Patrick Carlberg; Ivan Shorubalko; Daniel Wallin; Eva-Lena Sarwe; Marc Beck; Mariusz Graczyk; Werner Seifert; Hongqi Xu; Lars Montelius; Lars Samuelson
• Avdelning/ar: Fasta tillståndets fysik
• Publiceringsår: 2003
• Språk: Engelska
• Sidor: 196-202
• Publikation/Tidskrift/Serie: Microelectronic Engineering
• Volym: 67-8
• Länkar: http://dx.doi.org/10.1016/S0167-9317(03)00071-6
• Dokumenttyp: Artikel i tidskrift
• Förlag: Elsevier
• Ämne: Condensed Matter Physics
• Nyckelord: nanoimprint lithography; GaInAs/InP; three-terminal ballistic junction
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 1873-5568