Du är här

High Current Density InAsSb/GaSb Tunnel Field Effect Transistors

Publiceringsår: 2012
Språk: Engelska
Sidor: 205-206
Publikation/Tidskrift/Serie: Device research conference
Dokumenttyp: Konferensbidrag
Förlag: IEEE

Sammanfattning

Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest
due to their potential for low power operation at room temperature. The devices are based on inter-band
tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse
the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band
tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density
(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb
heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb
nanowire TFETs, which exhibit record-high on-current levels.

Disputation

Nyckelord

  • Technology and Engineering
  • Tunneling Field-Effect Transistors
  • Broken gap
  • InAs
  • GaSb

Övrigt

70th Annual Device Research Conference (DRC)
2012-06-18
University Park, TX
Published
Yes
  • ISSN: 1548-3770

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen

LERU logo U21 logo