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High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs

Redaktör:
  • Gunnar Malm
Publiceringsår: 2012
Språk: Engelska
Dokumenttyp: Konferensbidrag

Sammanfattning

In this paper we present 15 nm InAs nanowire lateral
MOSFETs with an Ω-gate. The nanowires are grown from
size-selected Au-aerosols by means of metal-organic vapor
phase epixtaxy (MOVPE). In order to reduce the source and
drain resistances, n-type dopants were introduced in the bottom
and top parts of the nanowire forming a n-i-n structure. We
report experimental data for 15 nm InAs nanowire MOSFETs,
LG = 150 nm, with a normalized transconducatance gm =
0.7 S/mm (normalized to the circumference) and a current
density Je = 24 MA/cm, comparable to modern high electron
mobility transistors (HEMTs)

Disputation

Nyckelord

  • Technology and Engineering
  • high-performance
  • MOSFETs
  • InAs
  • drive current
  • transconductance

Övriga

GigaHertz 2012
2012-03-06
Stockholm, Sweden
Published
Yes

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