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Dependence of Curie temperature on the thickness of epitaxial (Ga,Mn)As film

Publiceringsår: 2002
Språk: Engelska
Publikation/Tidskrift/Serie: Physical Review B
Volym: 66
Nummer: 23
Dokumenttyp: Artikel
Förlag: American Physical Society


We present the magnetotransport properties of very thin (5-15 nm) single (Ga,Mn)As layers grown by low-temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical-transport measurements. The Curie temperature is determined to be 97 K for the thinnest ferromagnetic sample and is found to decrease for increasing layer thickness. A carrier density of 7.1x10(20) cm(-3) for the 5 nm thick (Ga,Mn)As layer is determined from Hall measurements. Differences between magnetotransport properties of thick and thin (Ga,Mn)As layers are observed and discussed.



  • Physics and Astronomy


  • ISSN: 1098-0121

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