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Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs

Publiceringsår: 2002
Språk: Engelska
Sidor: 666-668
Publikation/Tidskrift/Serie: Nanotechnology
Volym: 13
Nummer: 5
Dokumenttyp: Artikel
Förlag: IOP Publishing Ltd


We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.



  • Nano Technology


  • ISSN: 0957-4484

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