Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs

Summary, in English

We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.

• Författare: Ivan Maximov; Patrick Carlberg; Daniel Wallin; Ivan Shorubalko; Werner Seifert; Hongqi Xu; Lars Montelius; Lars Samuelson
• Avdelning/ar: Fasta tillståndets fysik
• Publiceringsår: 2002
• Språk: Engelska
• Sidor: 666-668
• Publikation/Tidskrift/Serie: Nanotechnology
• Volym: 13
• Issue: 5
• Länkar: http://dx.doi.org/10.1088/0957-4484/13/5/325
• Dokumenttyp: Artikel i tidskrift
• Förlag: IOP Publishing
• Ämne: Nano Technology
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0957-4484