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Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor

Publiceringsår: 2002
Språk: Engelska
Sidor: 81-85
Publikation/Tidskrift/Serie: COMPOUND SEMICONDUCTORS 2001
Volym: 170
Dokumenttyp: Artikel
Förlag: IOP Publishing Ltd


We report on the formation of an attractive potential around buried metal wires in a novel design for the Hot Electron Transistor (HET). In this device, the doped base layer in the HET is replaced by an embedded metal grating, which is forward biased beyond flat band conditions in order to efficiently extract carriers from the emitter into the active region. These carriers are collected in a Schottky Collector contact. By tuning the gate and collector voltages, the potential profile around the wires can be repulsive as well as attractive. This is a key result for the realisation of a Biprism device.



  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics


  • ISSN: 0951-3248

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