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A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes

Publiceringsår: 2002
Språk: Engelska
Sidor: 363-367
Publikation/Tidskrift/Serie: Compound Semiconductors 2001 (Institute of Physics Conference Series)
Nummer: 170
Dokumenttyp: Konferensbidrag
Förlag: IOP Publishing Ltd.


In this paper we proposed a method for evaluating a homogeneous broadening (DeltaE(h)) and inhomogeneous broadening (DeltaE(i)) of the resonant energy level width independently by using current-voltage characteristics in double barrier resonant tunneling diodes (DBRTDs). The line shape of the resonant energy broadening is assumed as a convolution of Lorentz function and a Gauss function. Measured transmittance in GaAs0.25P0.75/GaAs DBRTDs grown by MOCVD is well fit to the convolution function. The DeltaE(h), DeltaE(i) were estimated as 4.3[meV] and 1.0 [meV], respectively, where the measured energy-voltage conversion factor 17 is 0.3[eV/V].



  • Physics and Astronomy


ISCS 2001
Tokyo, Japan
  • ISSN: 0951-3248

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