Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures
Publikation/Tidskrift/Serie: Physica E: Low-dimensional Systems and Nanostructures
Förlag: Elsevier Science B.V.
Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations. (C) 2002 Elsevier Science B.V. All rights reserved.
- Physics and Astronomy
- one-dimensional transport
Tenth International Conference on Modulated Semiconductor Structures. MSS 10
23-27 July 2001
- ISSN: 1386-9477