Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
Publikation/Tidskrift/Serie: Solid-State Electronics
Förlag: Elsevier Science B.V.
By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au.
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
- image force
- silicon carbide
- Schottky barrier height
- ISSN: 0038-1101