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Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Publiceringsår: 2002
Språk: Engelska
Sidor: 1433-1440
Publikation/Tidskrift/Serie: Solid-State Electronics
Volym: 46
Nummer: 9
Dokumenttyp: Artikel
Förlag: Elsevier Science B.V.


By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au.



  • Technology and Engineering
  • Physics and Astronomy
  • image force
  • silicon carbide
  • nano-particles
  • Schottky barrier height
  • lowering


  • ISSN: 0038-1101

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