Javascript is not activated in your browser. This website needs javascript activated to work properly.
Du är här

A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

Publiceringsår: 2002
Språk: Engelska
Sidor: 288-293
Publikation/Tidskrift/Serie: Applied Surface Science
Volym: 190
Nummer: 1-4
Dokumenttyp: Artikel
Förlag: Elsevier Science B.V.


A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.



  • Physics and Astronomy
  • heterointerface
  • strain barrier
  • band offset
  • GaAsP/GaAs
  • triple-barrier resonant tunneling diodes
  • thermionic emission


  • ISSN: 0169-4332

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen