A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

Summary, in English

A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.

• Författare: S Ohki; H Funato; M Suhara; T Okumura; Lars-Erik Wernersson; Werner Seifert
• Avdelning/ar: Fasta tillståndets fysik; Institutionen för elektro- och informationsteknik
• Publiceringsår: 2002
• Språk: Engelska
• Sidor: 288-293
• Publikation/Tidskrift/Serie: Applied Surface Science
• Volym: 190
• Issue: 1-4
• Länkar: http://dx.doi.org/10.1016/S0169-4332(01)00870-4
• Dokumenttyp: Artikel i tidskrift
• Förlag: Elsevier
• Ämne: Condensed Matter Physics; Electrical Engineering, Electronic Engineering, Information Engineering
• Nyckelord: heterointerface; strain barrier; band offset; GaAsP/GaAs; triple-barrier resonant tunneling diodes; thermionic emission
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 1873-5584