A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
Publikation/Tidskrift/Serie: Applied Surface Science
Förlag: Elsevier Science B.V.
A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.
- Physics and Astronomy
- strain barrier
- band offset
- triple-barrier resonant tunneling diodes
- thermionic emission
- ISSN: 0169-4332