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A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

Författare:
Publiceringsår: 2002
Språk: Engelska
Sidor: 288-293
Publikation/Tidskrift/Serie: Applied Surface Science
Volym: 190
Nummer: 1-4
Dokumenttyp: Artikel
Förlag: Elsevier Science B.V.

Sammanfattning

A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.

Disputation

Nyckelord

  • Physics and Astronomy
  • heterointerface
  • strain barrier
  • band offset
  • GaAsP/GaAs
  • triple-barrier resonant tunneling diodes
  • thermionic emission

Övriga

Published
Yes
  • ISSN: 0169-4332

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