Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
Författare
Summary, in English
A resonant tunneling permeable base transistor has been realized experimentally by overgrowing a tungsten grating placed in direct vicinity to a double barrier heterostructure. In this way, we can directly modulate the tunneling current via an embedded gate. Since the quality of the overgrown interface is critical, special attention is paid to this issue, and the effect of different wet etchants prior to overgrowth is studied both by electrical measurements and by the use of an atomic force microscope. A clear dependence of the electrical properties and the crystal quality on the etchants used is found. This is a key result for the realization of our resonant tunneling device.
Publiceringsår
2002
Språk
Engelska
Sidor
1066-1069
Publikation/Tidskrift/Serie
IEEE Transactions on Electron Devices
Volym
49
Issue
6
Dokumenttyp
Artikel i tidskrift
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Nyckelord
- resonant tunneling
- field-effect transistors
- gallium arsenide
- transistors
- surface cleaning
- tungsten
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0018-9383