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Designed emitter states in resonant tunneling through quantum dots

In English

Författare

Summary, in English

Resonant tunneling through a single layer of self-assembled quantum dots (QDs) is compared to tunneling through two layers of vertically aligned (stacked) dots. The difference can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. The temperature dependence of current peaks originating in tunneling through individual QDs and individual stacks is used to clarify this point. In addition, we show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analyzed in a resonant tunneling experiment. (C) 2002 American Institute of Physics.

Publiceringsår

2002

Språk

Engelska

Sidor

2681-2683

Publikation/Tidskrift/Serie

Applied Physics Letters

Volym

80

Issue

15

Dokumenttyp

Artikel i tidskrift

Förlag

American Institute of Physics (AIP)

Ämne

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0003-6951