High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
Författare
Summary, in English
We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.
Avdelning/ar
Publiceringsår
2013
Språk
Engelska
Sidor
211-213
Publikation/Tidskrift/Serie
IEEE Electron Device Letters
Volym
34
Issue
2
Fulltext
Dokumenttyp
Artikel i tidskrift
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- Broken gap
- GaSb
- III–V
- InAs
- tunnel field-effect transistors (TFETs)
Status
Published
Forskningsgrupp
- Nano
ISBN/ISSN/Övrigt
- ISSN: 0741-3106