Meny

Javascript is not activated in your browser. This website needs javascript activated to work properly.
Du är här

Optically induced charge storage and current generation in InAs quantum dots

Författare:
Publiceringsår: 2002
Språk: Engelska
Sidor:
Publikation/Tidskrift/Serie: Physical Review B
Volym: 65
Nummer: 7
Dokumenttyp: Artikel
Förlag: American Physical Society

Sammanfattning

We report on optically induced charge storage effects and cur-rent generation in self-assembled InAs quantum dots embedded in an InP matrix. Illumination with photons of energy higher than about 0.86 eV efficiently loads the dots with a maximum of about 1 hole/dot. The spectral response at lower photon energy is strongly enhanced at elevated temperatures. We present a detailed balance model for the dots and discuss the thermally assisted optical excitation processes pertinent to hole accumulation. We also show that these processes make the dots act as nanometer-scaled temperature-dependent current generators.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • ISSN: 1098-0121

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen