Du är här

One-dimensional heterostructures in semiconductor nanowhiskers

Publiceringsår: 2002
Språk: Engelska
Sidor: 1058-1060
Publikation/Tidskrift/Serie: APPLIED PHYSICS LETTERS
Volym: 80
Nummer: 6
Dokumenttyp: Artikel
Förlag: AMER INST PHYSICS

Sammanfattning

We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.

Disputation

Nyckelord

  • Chemistry
  • Physics and Astronomy

Övrigt

Published
Yes
  • ISSN: 0003-6951

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen

LERU logo U21 logo