A novel device principle for nanoelectronics
Publikation/Tidskrift/Serie: Materials Science and Engineering: C
Förlag: Elsevier Science B.V.
We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V.
- Physics and Astronomy
- 300 K
- parabolic behavior
- novel electrical characteristic
- symmetric three-terminal device
- broken device symmetry
- semiconductor QW
- push-pull fashion
- symmetric TBJ device
- three-terminal ballistic junctions
- room temperature electrical property
- ISSN: 0928-4931