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Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire

In English

Författare

Summary, in English

We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.

Publiceringsår

2016

Språk

Engelska

Sidor

205-211

Publikation/Tidskrift/Serie

Nano Letters

Volym

16

Issue

1

Dokumenttyp

Artikel i tidskrift

Förlag

The American Chemical Society (ACS)

Ämne

  • Nano Technology
  • Condensed Matter Physics

Nyckelord

  • Nanowire
  • doping
  • Hall effect
  • field effect
  • electrical characterization

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1530-6992