Study of influence of domain structure on observed magnetoresistance anomalies in GaMnAs
Författare
Summary, in English
Magneto-transport properties of a Ga0.93Mn0.07As ferromagnetic semiconductor film with strong epitaxial strain (Ga0.7In0.3As buffer) have been studied. The observed magnetoresistance showed peculiar peaks at the magnetic fields corresponding to magnetization switching probed by Hall voltage. Computer simulations showed that these anomalies could originate from the formation of complex, island-like magnetic domains, and their propagation in the sample.
Avdelning/ar
Publiceringsår
2013
Språk
Engelska
Sidor
4-093708
Publikation/Tidskrift/Serie
Applied Physics Reviews
Volym
113
Issue
9
Dokumenttyp
Artikel i tidskrift
Förlag
American Institute of Physics (AIP)
Ämne
- Physical Sciences
- Natural Sciences
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1931-9401